Gettering of iron by oxygen precipitates
WebJun 4, 1998 · ABSTRACT. In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen precipitate densities was performed. The number of iron precipitation sites was …
Gettering of iron by oxygen precipitates
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WebThe present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and … WebGettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Gettering …
WebJan 8, 1990 · The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm−3 and an oxide precipitate density of 5×109 cm−3. The concentrations of… Expand 18 PDF Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion WebJan 1, 2024 · In general, gettering can be considered as a three-step process: release, diffusion, and capture, as shown by the schematic in Fig. 1 [ 37 ]. If not already in a dissolved and mobile state, metallic impurities need to be first released from their metal-silicide precipitates and/or metal-containing clusters [ 38 ].
WebFeb 1, 2011 · The high sensitivity of image sensors to contaminants reveals that boron segregation gettering of iron dominates gettering by oxygen precipitates for both fast and slow cooling cycles. We estimate that the gettering efficiency for iron is 99.95%. Download to read the full article text References WebEnter the email address you signed up with and we'll email you a reset link.
WebDec 6, 2024 · Iron gettering at both implantation‐induced cavities and oxygen precipitates in silicon was experimentally measured and theoretically modeled. Since impurity …
WebDec 7, 2015 · Precipitate nuclei can be formed intentionally by careful thermal processing, and in silicon for integrated circuits, oxide precipitates are deliberately formed away from the active region of a device to provide internal gettering centres for harmful metallic impurities. 1,2 1. R. J. hah only two words inWebJul 15, 2011 · These oxygen precipitates act as gettering centers for Fe, as substantiated by a close correlation between the measured depth profiles of O and Fe after PDG. Our results suggest that... branded by keary taylorWebNov 1, 2016 · Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer J. Appl. Phys. (1993) There are more references available in the full text version of this article. Cited by (4) Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique branded by d bbqWebNov 1, 2016 · The factors on gettering effectiveness are studied, including the fabrication procedures and the structures of the polysilicon passivating contact. The research … hahom tainoWebNov 18, 2003 · The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm−3 and an oxide precipitate density of 5×109 cm−3. The concentrations of interstitial iron and iron–boron pairs were measured by deep level transient spectroscopy. haho military acronymWebINIS Repository Search provides online access to one of the world's largest collections on the peaceful uses of nuclear science and technology. The International Nuclear Information System is operated by the IAEA in collaboration with over 150 members. branded by christ cowboy churchWebDec 1, 1998 · In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen … branded cabinet